Katsaros Group
Nanoelectronics
It is impossible to picture modern life without thinking of the vast amount of microelectronic applications that surround us. However, such development has only become possible with the invention of the transistor in the 1950’s. This – back at that time – few centimeters large device, led to a technological revolution. Today the size of the transistors has been shrunk to 7nm where quantum physics comes into play. Researchers are now developing new concepts and techniques using quantum mechanics to allow information processing to operate on completely different principles and to create a quantum computer.
In this line, Loss and DiVincenzo suggested in 1998 the use of electron spins confined in lithographically defined quantum dots as elementary qubits to realize a quantum computer. In the past few years, holes in Germanium have emerged as a very promising platform for the realization of these spin qubits, due to their small effective mass and large spin orbit coupling and absence of the valley problem faced by non-confined electron spins. In addition, in the quantum information community there has been recently a huge wave of excitement about the prospect of using protected qubits for quantum computation. Such protection can be realized on the hardware-level by using topological qubits or cleverly designed electrical circuits.
In the nanoelectronics group, we study spin qubits in two-dimensional Germanium heterostructures and in parallel, we aim to understand whether protected qubits can be realized in hybrid semiconductor-superconductor systems. While our research is focused on the realization of different types of qubits, the group is very much interested in studying new fundamental physics emerging in semiconductor nanodevices.
Team
Current Projects
Hybrid semiconductor-superconductor quantum devices | Hole spin orbit qubits in Ge quantum wells | High impedance circuit quantum electrodynamics with hole spins
See the group website for up to date projects.
Publications
Janik M. 2024. Strong charge-photon coupling in Germanium enabled by granular aluminium superinductors. Institute of Science and Technology Austria. View
Sagi O. 2024. Hybrid circuits on planar Germanium. Institute of Science and Technology Austria. View
Sagi O, Crippa A, Valentini M, Janik M, Baghumyan L, Fabris G, Kapoor L, Hassani F, Fink JM, Calcaterra S, Chrastina D, Isella G, Katsaros G. 2024. A gate tunable transmon qubit in planar Ge. Nature Communications. 15, 6400. View
Severin B, Lennon DT, Camenzind LC, Vigneau F, Fedele F, Jirovec D, Ballabio A, Chrastina D, Isella G, de Kruijf M, Carballido MJ, Svab S, Kuhlmann AV, Geyer S, Froning FNM, Moon H, Osborne MA, Sejdinovic D, Katsaros G, Zumbühl DM, Briggs GAD, Ares N. 2024. Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. Scientific Reports. 14, 17281. View
Shimura Y, Godfrin C, Hikavyy A, Li R, Aguilera Servin JL, Katsaros G, Favia P, Han H, Wan D, de Greve K, Loo R. 2024. Compressively strained epitaxial Ge layers for quantum computing applications. Materials Science in Semiconductor Processing. 174(5), 108231. View
ReX-Link: Georgios Katsaros
Career
Since 2022 Professor, Institute of Science and Technology Austria (ISTA)
2016 – 2022 Assistant Professor, Institute of Science and Technology Austria (ISTA)
2012 – 2016 Group Leader, Johannes Kepler University, Linz, Austria
2011 – 2012 Group Leader, Leibniz Institute for Solid State and Materials Research, Dresden, Germany
2006 – 2010 Postdoc, CEA, Grenoble, France
2006 PhD, Max Planck Institute for Solid State Research, Stuttgart, Germany
2001 – 2002 Research Assistant, National Center for Scientific Research “Demokritos”, Athens, Greece
Selected Distinctions
2015 Elected member of the Young Academy of the Austrian Academy of Sciences (ÖAW)
2013 ERC Starting Grant
2013 FWF START Award
2012 FWF Lise Meitner Fellowship
2011 Marie Curie Carrier Integration Grant